j. c/ .ieu , li ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 complementary silicon medium-power transistors ..designed for general-purpose power amplifier and switching applications. features: * low collector-emitter saturation voltage vcei?tf-7 v (max.) @ lc = 1.5 a 'excellent dc current gain hfe = 25-100 @ lc = 1.5 a * low leakage current- lcex =0.1 ma(max) maximum ratings thermal characteristics characteristic thermal resistance junction to case symbol rejc max 2.32 unit c/w figure-1 power derating 80 2 70 0 i | 50 1 40 o 30 z 20 10 0 25 50 75 100 125 150 175 200 tc, temperature(ec) npn pnp 2N4231A 2n6312 2n4232a 2n6313 2n4233a 2n6314 characteristic collector-emitter voltage coiiector-base voltage emitter-base voltage collector current-continuous -peak base current total power dissipation @tc= 25c derate above 25c operating and storage junction temperature range symbol vceo vcbo vebo 'c icm 'b po tj '^sto 2N4231A 2n6312 40 40 2n4232a 2n6313 60 60 2n4233a 2n6314 80 80 5.0 5.0 10 2.0 75 0.43 - 65 to 4-200 unit v v v a a w w/c c 5 ampere complementary silicon power transistor 40-80 volts 75 watts to-66 pn1.base 2.0mtter collector(case> dim a b c d e f g h i j k millimeters win 30.60 13.85 8.54 9.50 17,28 0.76 1.38 24.16 13.84 332 4.86 max 32.52 14.16 7.22 10.50 18.46 0.92 1.66 24.78 15.60 3.92 5.34
2N4231A thru 2n4233a npn / 2n6312 thru 2n6314 pnp electrical characteristics ( tc = 25c unless otherwise noted ) characteristic symbol mln max unit off characteristics collector - emitter sustaining voltage (1) ( lc - 1 00 ma, i. = 0 ) 2n4231 a.2n631 2 2n4232a.2n6313 2n4233a.2n6314 collector cutoff current ( vel = 30 v, i. = 0 ) 2n4231 a.2n631 2 < vel = 50 v, i, = 0 ) 2n4232a.2n631 3 ( vcs = 70 v, i. - 0 ) 2n4233a.2n6314 collector-emitter leakage current ( ve. = 40 v,v.b-b-1 .5 v ) 2n4231 a.2m631 2 ( v- = 60 v.v.?":-! .5v) 2n4232a.2n631 3 ( vei = 80 v,v^-1:5 v ) 2n4233a.2n6314 < vm = 40 v.v ?-1.5 v ,te = 125c ) 2N4231A.2n6312 ( vh - 60 v,v!!^-1.5 v ,t! =? 125c ) 2n4232a.2n6313 ( v| = 80 v.v^'1-5 v .t* = 125'c ) 2n4233a.2n6314 collector cutoff current ( v6i * 40 v, i, = 0 ) 2n4231 a.2n631 2 (v^^eov, lt = 0) 2n4232a.2n6313 ( vei = 80 v, i, = 0 ) 2n4233a.2n6314 emitter cutoff current (veb = 5.0v,ic=0) vceo(n?) 'ceo 'cex icbo 'ebo 40 60 80 1.0 1.0 1.0 0.1 0.1 0.1 1.0 1.0 1.0 50 50 50 0.5 v ma ma ua ma on characteristics (1) dc current gain (ic-0.5a,vc.-2.0v) (lc = 1.sa,va,=?2.0v) (le-3.0a,vc, = 2.0v) (le = 5.0a,vel = 4.0v) collector-emitter saturation voltage (lc? 1.5 a, i, -0.16 a) (les3.0a,l. = 0.3a) (ic = 5.0a.i.= 1.25a) base-emitter saturation voltage (le=1.5a,vel = 2.0v) hfe vce,-? vbe |
